| 摘要 |
PURPOSE:To enhance density of integration and to obtain a dynamic random access memory unit contriving enlargement of capacity by a method wherein respective parts of the unit are disposed solidly. CONSTITUTION:An N<+> type diffusion layer 13 is formed selectively on a P<+> type silicon semiconductor substrate 11, and after a P type semiconductor vapor growth layer 14 is formed, a part of the vapor growth layer 14 is oxidized selectively to form an oxide film 12. Then a part of the oxide film 12 is removed selectively by photo lithography to expose the side part of the removed vapor growth layer 14 and the N<+> type diffusion region 13, a gate insulating film 19 is formed on respective exposed parts, and moreover a transfer gate electrode 15 to be connected to a word line 18 and a conductive layer 16 to be connected to a bit line 17 are formed. The capacitor to be constituted by the semiconductor substrate 11 and the N<+> type diffusion region 13 can be integrated solidly, and density of integration is enhanced. |
