| 摘要 |
<p>A semiconductor memory circuit comprises: word lines (WL); bit lines (BL); memory cells (MC) located at cross points of the word and the bit lines, each memory cell being comprised of a capacitor (CS), having a first electrode and a second electrode, and a transfer-gate transistor (Q5) connected in series with the capacitor at the first electrode thereof; pre-charge circuits (PRE) each of which charges one corresponding bit line to a predetermined pre-charge voltage derived from a memory power source; and, sense amplifiers (SA) each of which amplifies the voltage level developed at one corresponding bit line so as to have a high voltage level or a low voltage level in accordance with the charge stored in a corresponding capacitor. First circuitry is employed for supplying to the pre-charge circuit a pre-charge voltage the level of which is half-way between said high voltage level and the said low voltage level, and second circuitry is employed for supplying a predetermined voltage to the capacitor at the second electrode thereof; preferably said predetermined voltage to be supplied from said second circuity is exactly the same as the voltage to be supplied from said first circuitry.</p> |
