| 摘要 |
PURPOSE:To eliminate defect of aluminum electrode of a semiconductor device and to enhance yield of product and reliability thereof by a method wherein the surface of a semiconductor substrate is oxidized selectively to form the shape of the sections of contact hole parts in bird beak shape. CONSTITUTION:Silicon nitride layers 16 are adhered selectively on the semiconductor substrate 1 formed with source and drain regions 2, 3 and a field oxide film 4. When the substrate is oxidized nect, an oxide film 17 is formed, and the circumferential parts of the silicon nitride layers 16 are pushed up to form the bird beak shape. Then the silicon nitride layers 16 are removed to form contact holes, and an aluminum gate electrode 18, a source electrode and a drain electrode 19 of aluminum are formed. Because end parts of the contact holes form the bird beak shape having inclination, adhesion of aluminum is favorable, and abnormal etching, generation of mouth hole can be prevented. |
