| 摘要 |
The invention relates to a process for forming a patterned resist mask. …<??>The performance of ethylene glycol alkylether developers, for positive methacrylate-methacrylic acid copolymer and terpolymer resists, is controlled by adding an organic complexing agent, such as citric acid, or a combination of a transition metal salt and a complexing agent, such as ammonium citrate, to the developer. The additives provide a consistent development rate, so that the maximum difference between the dissolution rates of the exposed and unexposed portions of the resist layer can be maintained, regardless of the developer purity. |
