发明名称 MEMORY ELEMENT
摘要 PURPOSE:To improve the production control property against a defective chip at the state of a final inspection, by preparing in the chip a diode which is written electrically from the outside of a package. CONSTITUTION:A line address input line 1 becomes an input of a line address decoder 2, a row address input line 3 becomes an input of a row address decoder 4, and a word line 5 and a bit line 6 being each output select one memory element of a memory element array 7. At the time of a read-out operation, a chip selective line 10 is activated, and a write enable signal line 9 is passivated. At the time of a write operation, the line 10 and 9 are activated. The second upper rank address input line 13 and the uppermost rank address input line 14 are divided into each line and row address decoder selective line 16 and 17 by a dividing circuit 15, and control so that the memory array 7 is divided and used. In this case, an address is switched by adding a write enable diode element to one of the line 1, and utilizing its avalanche breakdown.
申请公布号 JPS5769582(A) 申请公布日期 1982.04.28
申请号 JP19800143803 申请日期 1980.10.15
申请人 MITSUBISHI DENKI KK 发明人 ODA YUKIO
分类号 G11C11/41;G11C29/00;G11C29/04 主分类号 G11C11/41
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