| 摘要 |
PURPOSE:To equalize characteristic of N-P-N transistors constituting I<2>L by a method wherein the distance between a buried diffusion region of an injection type logic circuit and an insulating diffusion region is made as shorter than the distance between a buried diffusion region of a linear amplifier circuit and the insulating diffusion region. CONSTITUTION:The buried layer 63 of an N-P-N transistor 700 consituting I<2>L is formed being enlarged. The buried layer 63 and the insulating diffusion layer 65 are possible to be made as to come in contact with each other or to intersect with each other. The deviation of beta according to the positions of a group of I<2>L N-P-N transistors existing in the same island region become to small, and yield of the integrated circuit consisting of the logic circuit constituting I<2>L and the linear circuit constituted of a high withstand voltage transistor can be enhanced. |
