| 摘要 |
PURPOSE:To prevent the etching of a lower insulating layer upon displacement of a wire in a semiconductor device having a multilayer wiring structure by decreasing the width of the lower layer wire than the contacting hole for connecting the upper and lower wires for facilitating the positioning. CONSTITUTION:The first layer polycrystalline silicon wire 1 is formed on insulating layers 5, 6 on a semiconductor substrate 7, a contacting hole 3 having larger width than the first layer wire 1 is formed at right angle on an interlayer insulating layer 4 formed on the wire 1, and the second layer aluminum wire 2 is formed thereon. Since the contacting hole 3 has a larger width than the wire 1, it can be readily connected between the upper and the lower wires even if a displacement occurs therebetween. The insulating layers 5, 6 on the substrate are respectively formed of nitrided silicon and dioxidized arsenic, and are not etched during the step of etching the phosphorus silicate glass forming the interlayer insulating layer. |
