发明名称 LIQUID PHASE EPITAXIALLY GROWING DEVICE
摘要 PURPOSE:To form a flat surface by forming a trapezoidal shape at the bottom surface of an eventual through hole of three through holes formed at a slide member to become a liquid reservoir so that the oblique surface becomes in a sliding direction. CONSTITUTION:A liquid reservoir 21 made of rectangular through hole is formed at a slide member 25 sliding on a supporting base 1 buried with dummy and epitaxially growing substrates 3, 4, and Pb1-XSnXTe material is filled therein. A liquid phase epitaxially growing device is inserted into a reaction tube, and is heated. Then, the liquid in the reservoir 21 is molten to sequentially slide the slide member 25 to form epitaxial phase. At this time a top layer forming liquid reservoir 21 is formed at the bottom of the through hole in a trapezoidal shape obliquely crossed in the sliding direction. In this manner, when the slide member 25 is moved in a direction B, the liquid phase attached to the substrate 4 can be removed, the epitaxially grown surface becomes flat, and the yield of the laser element to be thus formed is improved.
申请公布号 JPS5769732(A) 申请公布日期 1982.04.28
申请号 JP19800146021 申请日期 1980.10.17
申请人 FUJITSU KK 发明人 SHINOHARA KOUJI;NISHIJIMA YOSHINDO;FUKUDA HIROKAZU
分类号 H01L21/208;C30B19/06;H01S5/00 主分类号 H01L21/208
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