| 摘要 |
PURPOSE:To obtain a semiconductor device being attainable high reliability, high integrtaion, high speed operation at low cost by a method wherein the element is formed in a polycrystalline silicon layer formed on a silicon substrate interposing an insulating film between them. CONSTITUTION:The polycrystalline silicon layer 3 is formed on the silicon semiconductor substrate 1 interposing the insulating layer 2 between them. A source 4 and a drain 5 are formed in the polycrystalline silicon layer 3 providing the prescribed interval between them. A gate electrode 7 is formed on the polycrystalline silicon layer 3 between the source 4 and the drain 5 interposing a gate oxide film 6 between them. A CVD SiO2 film 8 is formed on the surface thereof, and aluminum wirings 10 are connected through contact holes 9. Because silicon is used for the semiconductor substrate 1, the semiconductor device can be formed as cheaper than a sapphire substrate. |
