| 摘要 |
PURPOSE:To eliminate the difference of etching amounts between the front surface and the back surface of a compound semiconductor substrate by contacting and etching the substrate with a solution heated to a growing temperature when a liquid phase epitaxial layer is grown on the substrate, then isolating the substrate from the solution and again contacting the substrate with the solution after the lapse of the predetermined period of time for growth. CONSTITUTION:A liquid phase growing boat 1 is formed of a substrate holder 2 and a solution holder 3, a GaP substrate crystal 4 is secured into the holder 2, and when the substrate and the solution 5 in the holder 3 are isolated, the holder 2 is placed on the holder 3. With this construction, the solution 5 may employ a mixture solution of GaP, Zn, GaO, etc., the entirety is first heated to 1,050 deg.C, and when the solution 5 becomes a heat balanced state, the boat 1 is rotated at 180 deg., the solution 5 from the exit 6 is flowed into the holder 2, the substrate 4 is moistened with the solution 5, is further heated to the prescribed temperature, and is thus etched. Thereafter, the boat 1 is returned to the original state to isolate the substrate 4 from the solution 5 to be cooled, and the substrate 4 is then contacted again with the solution 5 for the prescribed growth. |
