发明名称 LEAD MATERIAL FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To inexpensively produce a lead having excellent characteristics such as heat resistance, tensile strength, conductivity, etc. by employing as blank for lead frame an alloy of with predetermined ranges of Zn, Sn and Fe. CONSTITUTION:Elements of Zn, Sn, and Fe are contained 0.5-3.0wt% in the blank of a lead frame forming an IC or the like, with residue of Cu as a Cu alloy. The additions of Sn and Fe improve the strength and heat resistance, Zn improves the strength and the quality in the ingot. When the elements are contained less than 0.5wt%, sufficient strength and heat resistance cannot be obtained, while when the elements are contained more than 3.0wt%, the thermal and electrical conductivities and bending workability are lowered. For example, a plate of 0.3mm.thick can be formed by facing work of an ingot made of raw alloy, hot working it, then annealing and cold rolling it repeatedly. In this manner, the lead material of desired characteristics can be inexpensively produced.
申请公布号 JPS5768061(A) 申请公布日期 1982.04.26
申请号 JP19800143908 申请日期 1980.10.15
申请人 FURUKAWA DENKI KOGYO KK 发明人 AKASAKA KIICHI;YAMATO KOUZOU;SHINOZAKI SHIGEO
分类号 C22C9/00;H01L23/48;H01L23/495 主分类号 C22C9/00
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