| 摘要 |
PURPOSE:To simplify the manufacturing steps of an integrated circuit device by commonly using several treatment steps when manufacturing an IC containing an IC of the same channel induction type static induction transistor (SIT) and an IGFET. CONSTITUTION:A P<+> type epitaxial layer of a P type Si substrate 10 is isolated with a P<+> type layer 16, with an N<+> type buried layer as an island 14A and a well 18. A hole is opened at an SiO2 film, is thinly oxidized, Si3N4 films 36, 38, 40 are respectively superposed in the holes 22, 26, 28, the holes 24, 29 are exposed from the substrate, B is diffused, and a P+ type gate layer 42 and a P+ type channel stopper 43 is formed. An SiO2 film 32 of the hole 26 and an Si3N4 34 of the hole 28 are partly etched to form polysilicons 44, 46, 48, with them as masks an SiO2 film 30 of the hole 22 is etched, holes are opened at both sides of a polysilicon 46 to form N<+> type layers 50, 52, 54 to reduce the resistances of the polysilicons 44, 46, 48, and diffused layers 56, 58 are formed. Thereafter, SiO2 60 is covered, aluminum electrodes 62, 64, 66 are attached, and the SITQ1 and IGFETQ2 are integrated on the same substrate. |
