| 摘要 |
PURPOSE:To obtain an IGFET exhibiting saturated type characteristics by providing an electrode connected to a source at the side surface of an insulating film at source side. CONSTITUTION:A doped polysilicon electrode 6 is formed at the gate oxidized film 4 at an n<+> type source 3 side in an IGFET, and an oxidized film 7 prevents the shortcircuit with a doped polysilicon gate electrode 5. The electrode 6 is shortcircuitted with the source 3, and the potential at the oxidized film 4 at the source side is maintained equally to the source potential. In order to suppress the punch through current between the source and the drain of an MOS in general, ions of high dosage are injected at the deep position of the substrate. With this structure, it can reduce the decrease in the potential at the surface of the substrate in the vicinity of the source affected by the drain potential through a gate oxidized film 4, and excellent saturation characteristics can be obtained even with microminiature MOS. |
