| 摘要 |
PURPOSE:To enhance the gettering effect of a semiconductor by physically introducing a strain from the back surface of a wafer in the state that the wafer is heated to the prescribed temperature, thereby affecting the strain field in a wide range. CONSTITUTION:A placing base 12 is provided in a quartz shield 11 opened on the upper surface, and a plurality of wafers 13 are placed on the base in such a manner that the back surfaces are disposed upside. A nozzle 14 is movably provided thereon, SiO2 particles are, for example, blown together with high pressure air while heating the wafer 13 to 400-800 deg.C by a heater 15 provided at the lower part, a damage is imparted to the back surface of the wafer, and a strain is introduced thereto. The heating temperature is set and controlled in response to the thickness of the wafer 13. In this manner, the strain field can be introduced in a wide range into the wafer, and the gettering effect of the impurity and lattice defect nuclide can be increased. |
