发明名称 SEMICONDUCTOR PRESSURE DETECTOR
摘要 PURPOSE:To provide a temperature conpensating circuit for pressure sensitivity with a linear compensating function, by compensating the sensitivity of a pressure detection bridge circuit, composed of a semiconductor gauge resistance, by parallel semiconductor gauge resistances for compensation, etc. CONSTITUTION:A supply voltage to a pressure detection bridge circuit composed of a semiconductor gauge resistance is varied by a fixed resistance R0 between the base and emitter of transistor Q and parallel compensating semiconductor gauge resistances R+DELTAR and R-DELTAR having the opposite pressure characteristics and provided between the base and collector. According to both positive and negative pressures, the supply voltage to the pressure detection bridge circuit is therefore varied as well as temperature to perform the temperature compensation of pressure sensitivity and the linear compensation of positive and negative outputs by the same circuit, so that the pressure detector has high sensitivity and simple constitution.
申请公布号 JPS5767833(A) 申请公布日期 1982.04.24
申请号 JP19800143303 申请日期 1980.10.14
申请人 TOKYO SHIBAURA DENKI KK 发明人 SHIROMIZU SHIYUNJI;NODA RIYUUZOU
分类号 G01L9/04;G01L9/00;G01L9/06;(IPC1-7):01L9/04 主分类号 G01L9/04
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