发明名称 TARGETING APPARATUS
摘要 PURPOSE:To permit the effective use of a targeted substance by interposing insulators at the part which lies between the target fitting plate and conductor target substance and where the excessive wear of the targeted substance occurs. CONSTITUTION:In a targeting apparatus 11 using a DC sputtering apparatus, insulators 13 and 13 made of an Si2N4 film, etc. are provided at the part which lies between a target fitting plate 11a and a targeted substance 12 and where the wear of the substance 12 is excessive. Where the wear is not so excessive, solderings 14 and 14 are used to conduct between the apparatus 11 and the substance 12. When the apparatus 11 is used and the substance 12 is partially worn out, the insulators 13 and 13 are positively charged by Ar<+>, because the insulators 13 and 13 exist on that part, thereby eliminating the sputtering phenomenon. Consequently, apparatus 11 is not affected by sputtering, and the total thickness of the substance 12 can be used.
申请公布号 JPS5767169(A) 申请公布日期 1982.04.23
申请号 JP19800143302 申请日期 1980.10.14
申请人 TOKYO SHIBAURA DENKI KK 发明人 HAYAKAWA KENJI
分类号 C23C14/34;H01L21/203;H01L21/285;H01L21/31 主分类号 C23C14/34
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