| 摘要 |
PURPOSE:To prevent the threshold voltage of a semiconductor device from decreasing due to the high integration of the device by forming metal in Schottky contact with a semiconductor substrate on the surface of the substrate via a gate electrode and forming a source and a drain. CONSTITUTION:After a field oxidized film 12, a nitdided silicon film 13, a gate electrode 14 and an oxidized film 15 are sequentially formed on a P type silicon substrate 11, the substrate 11 is partly exposed on each of both sides of the gate electrode. A zirconium of metal forming a Schottky contact with the substrate 11 is covered on the exposed surface, is heated in nitrogen atmosphere, and Schottky contact metallic layers 16, 17 made of zirconium silicide are formed by heating them in the nitrogen atmosphere. When a source electrode 18 and a drain electrode 19 are formed on the metallic layers 16, 17, it can prevent the threshold voltage from decreasing since no high density region forming the source region and the drain region exist on the substrate 11. |
