| 摘要 |
PURPOSE:To form a gentle slope to the internal peripheral surface of a piercing hole to prevent disconnection of a wiring layer by treating with heating and melting an insulating layer formed on a substrate. CONSTITUTION:An insulating film 12, a wiring layer 13 and a PSG layer 14 are formed on a silicon substrate 11, and the layer 14 is etched taking a photoresist layer 15 as a mask. Then, after the layer 15 is removed, the layer 14 is melted with heating. At this time, a slope of an edge part of the opening of the piercing hole 16 becomes gentle. Next, the layer 14 is etched to allow the layer 13 to be exposed. Then, a wiring pattern 17 is formed. |
