| 摘要 |
PURPOSE:To completely eliminate the superposition of the first and the second insulating films even if pin holes exist in the first and the second insulating films respectively by performing window opening of the first insulating film and that of the second insulating film by separate processings respectively. CONSTITUTION:The first photoresist film 17 is formed on the first insulating film 2 to form windows 18, 19 and next, the removal of the film 2 is selectively done by etching the film 2 from the windows 18, 19 and the film 17 is removed with stepped sections m, n with electrodes being exposed. After that, the second insulating film 8 is formed on the whole surface of a wafer 1 and windows 23, 24 are formed at the main points equivalent to the stepped sections m, n by forming the second photoresist film 22 on the film 8. Next, the film 8 exposed from the windows 23, 24 is etched to selectively remove the film 8. After that, the film 22 is removed and windows 25, 26 connected to the film 2 and the film 8 are formed. |
