| 摘要 |
PURPOSE:To obtain a memory device which can write information by light emission by forming electrodes on both sides of a GaAs1-XPX semiconductor substrate formed with an oxidized layer on the main surface. CONSTITUTION:An oxidized layer 2 made of oxide of GaAs1-XPX is formed on the main surface of a semiconductor substrate 1 represented by GaAs1-XPX (0<=X<=1), and electrodes 3, 4 formed on the layer 2 and on the main surface of the substrate 1 of opposite side to the layer 2 side. When a light 5 having energy larger than the forbidden band width of the substrate 1 from the electrode 3 side, the capacity between the electrode 3 and 4 increases as compared with the dark state in which the light is not emitted. Binary information for the magnitude of the capacity is non-volatile, and can be erased in a short time by applying positive voltage to the electrode 3 side. |
