| 摘要 |
In accordance with this invention, a dynamic RAM cell comprises a substrate of one conductivity type in which is formed a first region of a second and opposite conductivity type and a first pocket of this second conductivity type. The first pocket has formed therein a second pocket of the same conductivity type as the substrate but of a higher doping concentration than the substrate. By forming a channel between the first region and the first pocket, the charge in this first pocket can be controlled to represent a selected bit of information. The magnitude of charge stored in this first pocket can then be determined by forming a channel across this first pocket to the second pocket from the substrate. The time rate of change of the potential in the second pocket then is representative of the stored charge of information in the first pocket due to the fact that the impedance of the channel formed across the first pocket is directly related to the amount of charge stored in the first pocket. |
