| 摘要 |
<p>A static type semiconductor RAM device comprises a plurality of memory cells (MC) arranged at the crossing points of word lines (WD) and bit lines (B) with load circuits (Q10, Q20, ...) connected between the bit lines (B) and a voltage source (VDD). The RAM device also includes a charging circuit (Q110, Q120, ...) which electrically charges all the bit lines (B) during the switching period of the word lines when all of the word lines (WD) are in a non-selected condition.</p> |
