| 摘要 |
Suitably complexed cupric solutions can deposit conductive copper films electrolessly on properly catalyzed non-conductive substrates, at plating bath pH values in the range of about 2.0 to 3.5, using a non-formaldehyde reducer such as hypophosphite. Certain conditions are critical to successful results: (1) ability of the complexer selected to chelate copper at pH values of 2.0 to 3.5 at elevated temperatures (140 DEG to 160 DEG F.); (2) avoidance of certain anions, such as halides and acetates, in significant concentrations in the plating solution; and (3) provision of an "active" catalytic surface on the non-conductive substrate.
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