| 摘要 |
PURPOSE:To obtain a semiconductor device being easy to regulate resistance value and having a small occupying area by a method wherein the main semiconductor device is provided at the top of a convexed part, and a current path being in parallel with the main semiconductor device is formed contiguously thereto at the upper end of the side of a groove formed when the convexed form is shaped. CONSTITUTION:An N type layer 32 is provided on a P type Si substrate 31, and a P type resistance layer 33 is provided in the N type layer 32. Field oxide films 34a, 34b are provided on the surface to be used as masks, and the part other than the resistor forming part of the P type layer 33 and the N type layer 32 is etched up to reach the substrate 31 to form the groove 35. B ions are implanted from the direction 36 shown with arrow marks to form a P type layer 37. After then the whole surface is covered with an oxide film, openings are formed in the areas ABGH, CDEF and Al wirings are adhered. By this constitution, because the resistor is provided by ion implantation at the upper end of the side of the groove for isolation of the main element, regulation of resistance value is facilitated, and because a hybrid circuit with the resistor can be formed with the occupying area of only the main element, the whole of the chip can be miniaturized. |
