| 摘要 |
PURPOSE:To eliminate the influence of the warpage of a substrate coated with a resist at the time of exposing it with an electron beam by securing the substrate to a support at the prescribed temperture with melting or evaporating bonding material, drawing and, developing it, and then heating to isolate it from the support. CONSTITUTION:An electron beam resist 22 is coated on a wafer 21 formed with a warpage (h) due to heating step or the like, the wafer is then secured to a support 23 with adhesive 24 to the state having less warpage. An electron beam exposure is carried out with the adhesive 24, e.g., a poly-n-butyl methacrylate melting at 20- 300 deg.C or a poly-alpha-cyanomethylacrylate evaporating thereat or the like, a development is then performed to form a pattern, the adhesive 24 is then molten or evaporated by the heat, for example, in the step of post-baking, and the support 23 is isolated from the wafer 21. In this manner, it can prevent the decrease in the resolution or position accuracy upon warpage of the wafer 21, thereby precisely forming the microminiature pattern. |
