| 摘要 |
PURPOSE:To stabilize a height of an energy barrier by a method wherein by forming Schottky junction having a specified area consisting of a collection of small areas a strain generated when platinum silicate is produced is decreased. CONSTITUTION:An SiO2 3 on a P<-> type Si substrate 1 segregated with a P<+> type layer 2 is selectively opened, splitted into a plurality of element regions with a film 3a, and by heat-treatment after formation of a Pt laver at the opening a ptSi layer 4a is formed. A layer 4a is mutually connected with an Al 5, Consequently by Schottky junction composed of a collection of small areas and managed minimum strain generated on a juction a height of an energy barrier is stabilized. |
