发明名称 Producing a silicon carbide structure and multidirectional silicon carbide texture
摘要 The method for producing a silicon carbide structure comprises the stages of immersing the carbon structure into a bath containing 20 to 40% by weight of silicon powder in suspension in a liquid medium containing 10 to 30% by weight of fugitive resin, the remainder being constituted by a resin solvent, and of drying the structure in order to obtain an easy-to-handle carbon structure coated with resin and silicon powder bonded in the resin. The structure is then subjected to a heat treatment to let the silicon react with the carbon and produce a silicon carbide structure.
申请公布号 US4325930(A) 申请公布日期 1982.04.20
申请号 US19800221448 申请日期 1980.12.30
申请人 SOCIETE EUROPEENNE DE PROPULSION 发明人 VALLET, ANDRE M.
分类号 C01B31/36;C04B35/56;C04B35/573;C04B35/622;C04B35/80;(IPC1-7):C01B31/36 主分类号 C01B31/36
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