摘要 |
PURPOSE:To carry out testing of a semiconductor to be tested surely in a short time by supplying large electric current in a pulse-like manner to said device for a short time and measuring the characteristics thereof right thereafter. CONSTITUTION:Large pulse-like electric current is supplied from a DC constant current source 2a to a Zener diode 1 as a semiconductor device to be tested fof the prescribed time only. Next, after the supply of this large current, a changeover switch 7 is immediately changed over and the dielectric strength and leak current of the diode 1 are measured with a characteristic measuring device 6. The junction defect of the diode 1 is measured surely in an extremely short time. |