| 摘要 |
PURPOSE:To obtain a photosensitive body of a 3 layer structure, which satisfactorily protects a photoconductive layer by a transparent dielectric layer, by forming a photoconductive layer consisting of As2Se3 being in ohmic junction with a conductive substrate, on the conductive substrate, and providing a transparent dielectric layer on said layer. CONSTITUTION:On a conductive substrate 1A, a photoconductive layer 1B consisting of As2Se3 is formed, on which a trasparent dielectric layer 1C is provided. It is constituted so that the junction state of the substrare 1A and the photoconductive layer 1B is an ohmic junction, and the ratio of a current in the reverse direction against a current in the forward direction in case the intensity of the electric field is 5X10<4>V/cm becomes >=0.3. In this way, the selection range of a material of the transparent dielectric layer IC being a protective film is expanded by using the As2Se3 photoconductive layer 1B which is excellent in heat resisting property, so that a material which is excellent in mechanical property, chemical property and electrical property can be selected, and it is possible to obtain an electrophotography photosensitive body 1 of a 3 layer structure which satisfactorily protects the photoconductive layer 1B. |
