| 摘要 |
PURPOSE:To stabilize lateral mode oscillation by making low threshold value operation possible, by employing a 3-layer structure having in the middle a reverse conductive type layer as a current-narrowing layer, and then by providing an active layer in an opening section of this narrowing layer. CONSTITUTION:A P type InP 8, an N type InP 11 and a P type InP 12 are laminated in turn on an N type InP substrate 1, and after a groove 13 is provided on the center, N type InP layers 9 and 10, an N type InGaAsP active layer 3 (2 is also an N type InGaAsP layer) and a P type InGaAsP layer 4 are laminated in turn, and an electrode 6 is provided through an insulation film 5, and then, an electrode 7 on the other side is also formed. It is possible, by doing so, to prevent current leakage, to enable basic lateral mode oscillation to take place at a low threshold value and a high efficiency, and also to improve the temperature characteristics. |
