| 摘要 |
PURPOSE:To made the density high and to improve a yield rate by forming masks on regions adjacent to source-drain diffused layers and a field oxide film and thereby forming an opening for an electrode. CONSTITUTION:On a silicon substrate 21 are formed the field oxide film 22, a gate oxide film 23 and a polycrysalline silicon gate 24, and further the source-drain diffused layes 25 and 26 are formed. Next, a nitride film is connected to the surface and etched, and thereby a nitride film 28 is formed on a gate electrode, while nitride films 29 and 30 are formed in the parts ranging from the source-drain diffused layers 25 and 26 to the field oxide film 22. Then, a thermal oxide film 31 is formed in the oxygen atmosphere, the nitride films are removed, and the opening for an electrode is formed. And further metal is evaporated, patterning is conducted, and thus the electrode is formed. |
