| 摘要 |
PURPOSE:To make it possible to form the pattern characterized by excellent resolving power and which is suitable even for a dry process by using two layers of negative radiation sensitive resists. CONSTITUTION:On one main flat surface of a substrate 1, a thin film 2 of the first negative radiation sensitive resist is formed, and a film 3 of the second negative radiation sensitive resist is formed thereon. Said resist films 2 and 3 have different sensitivities but have equal solubility with respect to the same solvent. The resist 2 having the higher sensitivity forms the lower layer. The radiation 4 is irradiated to the desired part of the double structured radiation sensitive resist films 2 and 3, and development is performed. Thus a convex pattern is formed. At this time, since the resolving power of the resist is determined by the thin resist 2 which forms the first layer, the pattern having the good resolving power is obtained. Since the film thickness of the central part is thick, the device is suitable even for the dry process. |
