| 摘要 |
PURPOSE:To avoid short circuits caused by a high reflectivity film between two ohmic electrodes completely, by performing chamfering at a side, where the surface of the ohmic electrode on the side of a substrate is contacted with the end surface of a resonator, in which the high reflectivity film is formed. CONSTITUTION:The vicinity of a side, where an ohmic electrode surface 5 on the side of a substrate is contacted with the end surface of a resonator, in which a high reflectivity film 10 is formed, is chamfered. Even if a short- circuit path is formed between the ohmic electrode film 5 on the substrate side and an ohmic electrode film 6 on the side of a cap layer, the short circuit path can be released by removing a part of the high reflectivity film 10. Therefore, the intrinsic operation of a semiconductor laser can be stabilized. When the chamfered area is too large in chamfering, damages such as cracks might be yielded at the end surface of the resonator. Therefore, it is a matter of course to pay sufficient attention.
|
