| 摘要 |
PURPOSE:To enhance the efficiency of a solar battery by adding at least boron and Ge or boron, hydrogen and Ge to an Si solar battery Pn or Pin structure of form a P type layer. CONSTITUTION:Boron is introduced by an ion injection method from the main surface 1 side of an N type single crystalline Si substrate 1. Then, the Ge ions are injected. An annealing for electrically activating the boron is carried out to form a P type layer 5. The peak density of boron injected layer is high density layer, is electrically activated by the effect of the addition of the Ge, thereby reducing the resistivity. An ohmic electrode 6 is covered on the layer 5, and an electrode 7 is covered on the layer 1 as a solar battery. In this manner, the P type layer having low resistivity and mechanical stability can be formed, thereby enhancing the effici- ency of the solar battery. |
