| 摘要 |
PURPOSE:To detect the change of an etching condition and an end point of etching easily, and to improve the reliability of etching treatment by monitoring the voltage between one surface of a semiconductor substrate and a reference electrode immersed opposing to the other surface. CONSTITUTION:Voltage between one surface 51 of the substrate 31 and the reference electrode 90 mounted opposing to the other surface 41 is monitored by means of a voltmeter 80. Since the voltage suddenly changes with the change of the etching condition according to a graph indicating the relationship of the immersion time of an etching liquid and the voltage at the time of etching after forming an insulating film 72 in PSG onto a metallic layer 71 in Al, the change of the etching condition can easily be grasped when monitoring the voltage. Accordingly, the end point of etching can easily be detected, and etching having high reliability can be conducted. |
