| 摘要 |
PURPOSE:To carry out high performance and high integration of a semiconductor device by forming a protective film, preventing the thinning in the etched film of a field insulating film and securing a sufficient field inversion voltage. CONSTITUTION:An SiO2 film 102 is formed on a P type silicon substrate 101, and an Si3N4 film 103 is formed as a protective film thereon. After a resist pattern 104 is then formed, with the pattern as a mask boron ions are injected to form a P type inversion preventive layer 105 on the substrate 101. Then, it is exposed with reactive gas containing fluorided hydrogen. At this time the films 103, 102 directly under the resist film of the resist pattern 104 are selectively removed, the resist pattern 104 is thereafter removed, thereby forming a field oxidized film 106 covered with the protective (Si3N4 film) 103 on the upper surface. Thereafter, an element is formed. |
