| 摘要 |
PURPOSE:To improve the yield of a semiconductor device by selectively oxidizing it by utilizing an SiXNYOZ film, suppressing the quantity of nitrided compound becoming a defect at the time of forming a gate oxidized film and preventing the improper gate withstand voltage. CONSTITUTION:An SiO2 film 2 is formed by thermal oxidization on a silicon substrate 1. Then, a silicon oxynitrided film (SiXNYOZ film) 8 and an Si3N4 film 3 are grown by a chemical gas phase growth method. Subsequently, these films are patterned. Thereafter, the region except the non-oxidzed region covered with these films is selectively oxidized to form a field oxidized film 4. Then, an element is formed on the non-oxidized region. In this manner, it can prevent the improper gate withstand voltage. |
