| 摘要 |
PURPOSE:To change an amorphous silicon layer shaped onto a silicon dioxide layer on the semiconductor substrate through evaporation, etc. into a single crystal thin film, which has no crystal defect and has excellent crystallinity. CONSTITUTION:Latticed grooves 4 with 1,000-3,000Angstrom depth are formed to the silicon dioxide layer 2 on the silicon substrate 1 in the width and intervals of 1- 3mum, and the amorphous silicon layer 3 is shaped in the thickness of 0.5-1mum through an evaporation method, etc. The sample is heated for several hrs.- several tens hrs. at 1,200-1,400 deg.C at 10atm. or higher in an inert gas such as nitrogen, the amorphous silicon is fluidized and changed into a single crystal, and the single crystal thin-film, an orientation thereof vertical to the substrate 1 is (100) and an orientation thereof parallel with the grooves 4 is (010), is grown. The single crystal thin-film having face orientation of every kind is obtained by changing the shape of the grooves 4. |
