| 摘要 |
PURPOSE:To prevent the deterioration of the electric characteristics of a semiconductor device by covering glass on the mesa surface formed on the peripheral side surface of a semiconductor element and adhering an annular reinforcing member via the glass layer to protect the part crossing at an acute angle to the main surface of the substrate with the mesa surface. CONSTITUTION:A semiconductor substrate 14b has an anode region of P type region 14P and a cathode region of N type region 14N, N<+> type region 14N', and a cathode electrode 14c is formed on one surface, and an anode electrode 14a is formed on the other surface. An inactivated layer 24g for covering a P-N junction exposed on the peripheral side surface formed on a mesa is formed with glass, the substrate is bonded, and the bonded layer 24g' with the supporting reinforcing member 14f is fored of glass. In this manner, it can eliminate the strain of the substrate of a large power pressure contact type semiconductor device and the deterioration of the electric characteristics and thereby enhancing the reliability. |
