| 摘要 |
PURPOSE:To improve the frequency characteristics of a semiconductor device by forming two capacitance electrodes on the same dielectric substrate, thereby remarkably shortening the size of the circuit and improving the amplifying gain of a multi-stage amplifier circuit. CONSTITUTION:The first and second semiconductor chips 1A, 1B of a GaAsFET are formed by using a concentrated constant internal matching element. The first output internal matching circuit is composed of a capacitance with the first electrode 26 formed on a dielectric substrate 25 and an inductance with a bonding wire 28, and the second input internal matching circuit is composed of a capacitance with the second electrode 29 and an inductance with a bonding wire 31. A gap condenser is formed by forming a fine slit 32 between the two capacitance electrodes 26 and 29 formed on the same substrate 25, the output and input matching circuits are isolated in a DC manner, and are densely coupled in RF manner. |
