| 摘要 |
PURPOSE:To eliminate the improper bonding of a semiconductor device by superposing a part of an electrode pad of a bonding part on an insulating layer extending from the peripheral edge of a contacting hole and connecting the electrode pad at the bonding part even if the pad is electrically isolated from the stepwise difference. CONSTITUTION:A projection 14P into a contacting hole is formed on a passivation layer 14. The projection is so formed as to be inserted into the lower part of the bonding part 17a of an electrode leading wire 17 for an electrode pad 16. Even if stepwise disconnection due to the stepwise differece exists, the electrode pad 16a connected to the active region and the electrode pad 16b formed on an insulating layer are electrically conducted via the bonding part 17a. In this manner, as MOS configuration electrode and a strong passivation film are compatible with each other, thereby obtaining a bipolar type semiconductor device having less improper bonding part. |
