| 摘要 |
PURPOSE:To obtain a GaN single crystal with a flat surface by setting conditions such as the gas partial pressure of a reaction system within a predetermined range when the single crystal is grown on a sapphire substrate in the gaseous phase through a GaN-NH3 group reaction. CONSTITUTION:When GaN formed by reacting GaCl, which is formed by forwarding an HCl gas to gallium 13 on a boat 9 in a growth oven 1 by an N2 carrier gas, and NH3 in the N2 carrier gas is grown to the single crystal on the sapphire substrate 14 kept at a crystal growth temperature by means of a heater 12b, HCl is made 1.25X10<-3>-2.50X10<-3>atm., NH3 1.63X10<-1>-2.50X10<-1>atm., the carrier gas N2 of HCl 1.25X10<-1>-1.88X10<-1>atm., and the carrier gas N2 of NH3 4.35X 10<-1>-7.11X10<-1>atm. in the gas partial pressure of these reaction systems respectively and the velocity of crystal growth is made 5-10mum/hr when the temperature of the substrate is 960-980 deg.C and the inside of the oven 1 has 1atm. Accordingly, the desired GaN single crystal is obtained. |
