| 摘要 |
PURPOSE:To prevent the ions from intruding from outside into a semiconductor device by forming a metallic film retained at high voltage and a metallic film retained at low voltage via a protection film on a semiconductor substrate formed with an elecment. CONSTITUTION:An n type impurity layer 2 is formed on a semiconductor substrate 1, and an element region, e.g., a p type base region, 3, an n type impurity region 4, etc., is formed. Then, dioxidized silicon film 6 is formed on the surface of the layer 2, and contacting holes communicating with the base region 3, an emitter region 5 and the impurity region 4 are opened. Subsequently leading electrodes 8, 9 are formed via the contacting holes, and a protection film 10 made of phosphorus silicate glass is formed on the surface. Eventually, patterns of high potential metallic film 11 and low potential metallic film 12 are formed on the film 10, and are respectively connected to high and low voltage units. Chlorine ions, sodium ions, etc. Intruding from outside are collected by the films 11, 12. |
