| 摘要 |
PURPOSE:To obtain the title device capable of easily evaluating a specified thin-film crystal governing the characteristic of a compd. semiconductor device by providing an evaluation crystal growth controller to be brought into contact with a preset optional soln. among plural kinds of solns. to an evaluation substrate supported by a substrate holding member. CONSTITUTION:When a light receiving layer 13 of InGaAs is the object to be evaluated, the evaluation substrate 25 is provided to an opening 18a preceding an opening 18 contg. the corresponding soln. 20 to form a means 28a enabling crystal growth. A lid 29 is provided in the succeeding opening 18b to form a means 28b stopping crystal growth. When a slider 17 moves to the left, the substrate 11 and substrate 25 on which an InGaAs layer is grown are confronted with the opening 18b. Consequently, the lid 29 falls onto the InGaAs layer on the substrate 25, and the layer is covered. As a result, further crystal growth on the substrate 25 is controlled, and the crystal growth of all kinds necessary for device preparation is carried out on the substrate 11. Only the InGaAs layer governing the characteristic of the device is simultaneously grown on the substrate 25 exactly in the same way.
|
