| 摘要 |
PURPOSE:To form a thin film having a uniform film thickness quickly on a large-area substrate, by providing a control member over the substrate to be treated so that the distribution of the film forming speed of a decomposed reactive gas on the substrate is narrowed. CONSTITUTION:The control member 2 is provided above the substrate 4 to be treated and an aperture 14 thereof is directed to the substrate 4 at the time of decomposing the reactive gas in a space by a laser beam 3 and forming the thin film on the substrate 4. This member 2 is constituted of decomposing chambers 2a, 2c having a U-shaped section and a supporting plate 2e and a gaseous raw material introducing pipe 12 is provided to the chamber 2c. the gaseous raw material is introduced through the pipe 12 into the chamber 2c, is supplied through an introducing port 1 into the chamber 2a and is decomposed by a laser beam 3, by which the thin film is deposited on the substrate 4 in this constitution. The substrate 4 is scanned by moving a substrate holder 5 in an arrow 15 direction at this time. The distribution of the film forming speed is thereby narrowed and the thin film having the uniform film thickness is formed on the substrate 4 in the short treatment time without being affected even if film forming conditions change.
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