| 摘要 |
PURPOSE:To obtain a method having excellent reproducibility and dimensional accuracy by coating a wafer with positive type resist, giving a focus value larger than an optimum value, aligning a focal point under a resist layer to expose it, and forming an inversely tapered shape resist pattern. CONSTITUTION:A wafer 1 is coated with positive type resist, a focus value is increased larger than an optimum value to align a focus under the resist layer to be exposed, thereby forming an inversely tapered shape resist pattern 2. That is, the focus value is slightly increased for an optimum exposure time, i.e., the focus is slightly moved toward the lower part of the resist to be exposed. Accordingly, when a forming method for the pattern is used, an ideal metal pattern can be formed by a lifting OFF method in simple steps, and an ion-implanted region of concentration distribution can be formed in simple steps. |
