| 摘要 |
<p>An electrostatic chucking device for use in dry etching apparatus comprises a supporting base (not shown) the temperature of which is maintained at a predetermined value, an insulator (2) on the supporting base, a pair of plane electrodes (4, 5) in the insulator, and a material (3) being chucked on the pair of plane electrodes, the material containing at least a conductive portion. The sum of the areas of the portions of the plane electrodes which overlap with the material are almost equal to the contact area between the material (3) and the insulator (2). When a voltage is applied between the plane electrodes from an external power source, the material is chucked electrostatically to the supporting base. The electrostatic force attracting the material is maximized by the large area of the electrodes, and further by making the areas of the two electrodes equal.</p> |
