| 摘要 |
PURPOSE:To ensure the contamination evaluation of substrate surface by a treatment process and to increase reliability, by a method wherein a P-N junction is formed by diffusing different impurities to a substrate and many elements and a checking element widened junction area than the elements are formed. CONSTITUTION:For example, a plurality of elements 13 for evaluating contamination are formed by dispersedly arranging on a substrate 11 forming may elements 12 such as transistors. The elements 12 are formed by doubly diffusing a P type base layer 18 and N<+> emitter layer 19 on the N-substrate 11. On the other hand, a P type diffusion layer 18' is formed on the element 13 for evaluation by a base diffusion process and the pattern of the P type layer 18' is constituted in the shape with a warped circumference and formed so that the layer 18' may be longer than the surrounding length of the layer 18. In this way, the contamination of the sub- strate surface by diffusion, photo etching processes and the like can be detected with good efficiency by permitting large junction area at the surface region of the element 13 for evaluation. |
