| 摘要 |
PURPOSE:To permit photo processing of a substrate with larged diference in level, by a method wherein a resist film is applied by spinning on a substrate and corners of the difference in level which are not coated are removed by etching and are covered again by the resist film coating. CONSTITUTION:For instance, in the photo processing of a high dielectric strength IC of separated dielectric formation, a resist film 10' is applied on a substrate with an island-like convex 2 by spinning. In such case, when the difference in level is large, the corners of the convex are not covered by the resist film 10' even if resist with high viscosity is applied by spinning at low revolution speed. This substrate is plasma-etched in an atmosphere of CF4 gas with 5% of O2 being added so that the corners are made amooth. Then over the substrate a resist film 10'' is applied again and patterning is made by exposing and developing. With above method surface of a substrate with approximately 20mum difference in level can be covered with a resist film and photo processing of such substrate can be made without trouble. |
