| 摘要 |
PURPOSE:To improve sensitivity and perform developing treatment free from wear of the film by developing the electron beam resist consisting of polymethyl methacrylate with mixed solns. of isopropyl alcohol and nitromethane. CONSTITUTION:The electron beam resist prepd. by dissolving polymethyl methacrylate in a solvent is coated on a substrate and is subjected to heat treatment, after which it is subjected to electron beam exposure. Thence, this is developed by using a developing solns. consisting of mixed solns. of isopropyl alcohol and nitromethane. Thereby, the sensitivity is made 2-3 times higher than that when commonly used high energy developing solns. are used, and polymethyl methacrylate is usable as resist of high practicability in semiconductor industry. |
